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IXFH 80N10Q
IXFT 80N10Q
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ.
Max.
TO-247 AD (IXFH) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
V DS = 10 V; I D = 0.5 I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
R G = 1.5 W (External)
30
45
4500
1600
870
30
70
68
30
S
pF
pF
pF
ns
ns
ns
ns
Q g(on)
Q gs
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
180
36
nC
nC
Dim. Millimeter
Min. Max.
A 19.81 20.32
Inches
Min. Max.
0.780 0.800
Q gd
R thJC
95
0.35
nC
K/W
B
C
D
20.80 21.46
15.75 16.26
3.55 3.65
0.819 0.845
0.610 0.640
0.140 0.144
R thCK
(TO-247)
0.25
K/W
E
F
4.32 5.49
5.4 6.2
0.170 0.216
0.212 0.244
G
H
1.65 2.13
- 4.5
0.065 0.084
- 0.177
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
J
K
L
M
1.0 1.4
10.8 11.0
4.7 5.3
0.4 0.8
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
I S
V GS = 0 V
80
A
N
1.5 2.49
0.087 0.102
I SM
V SD
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
320
1.5
A
V
t rr
Q RM
I RM
I F = 25A,-di/dt = 100 A/ m s, V R = 50 V
0.85
8
200
ns
m C
A
TO-268AA (D 3 PAK)
Dim.
A
A 1
A 2
b
b 2
C
D
E
E 1
e
H
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.9 5.1
2.7 2.9
.02 .25
1.15 1.45
1.9 2.1
.4 .65
13.80 14.00
15.85 16.05
13.3 13.6
5.45 BSC
18.70 19.10
2.40 2.70
1.20 1.40
1.00 1.15
0.25 BSC
3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Min. Recommended Footprint
? 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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